技术参数

• Package / Case 12-SIP Exposed Tab
• Mounting Type Through Hole
• Configuration 3 N and 3 P-Channel (3-Phase Bridge)
• Operating Temperature 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 5W
• Drain to Source Voltage (Vdss) 60V
• Current - Continuous Drain (Id) @ 25°C 10A
• Input Capacitance (Ciss) (Max) @ Vds 460pF @ 10V, 1200pF @ 10V
• Rds On (Max) @ Id, Vgs 140mOhm @ 5A, 4V
• FET Feature Logic Level Gate
• Supplier Device Package 12-SIP
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• RoHS Status ROHS3 Compliant