技术参数

• Package / Case 8-PowerVDFN
• Mounting Type Surface Mount
• Configuration 2 N-Channel (Dual) Common Drain
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 3.1W
• Drain to Source Voltage (Vdss) 20V
• Input Capacitance (Ciss) (Max) @ Vds 2065pF @ 10V
• Gate Charge (Qg) (Max) @ Vgs 22nC @ 4.5V
• FET Feature Logic Level Gate
• Vgs(th) (Max) @ Id 1V @ 250µA
• Supplier Device Package 8-DFN-EP (3x3)
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected