- 产品型号 BSD840NH6327XTSA1
- 品牌 IR (Infineon Technologies)
- RoHS Yes
- 描述 MOSFET 2N-CH 20V 0.88A SOT363
- 分类 FET、MOSFET 阵列
-
PDF
- 库存 150816
技术参数
- Package / Case 6-VSSOP, SC-88, SOT-363
- Mounting Type Surface Mount
- Configuration 2 N-Channel (Dual)
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- Power - Max 500mW
- Drain to Source Voltage (Vdss) 20V
- Current - Continuous Drain (Id) @ 25°C 880mA
- Input Capacitance (Ciss) (Max) @ Vds 78pF @ 10V
- Rds On (Max) @ Id, Vgs 400mOhm @ 880mA, 2.5V
- Gate Charge (Qg) (Max) @ Vgs 0.26nC @ 2.5V
- FET Feature Logic Level Gate
- Vgs(th) (Max) @ Id 750mV @ 1.6µA
- Supplier Device Package PG-SOT363-PO
- ECCN EAR99
- HTSUS 8541.21.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant


