技术参数

• Package / Case SOT-563, SOT-666
• Mounting Type Surface Mount
• Configuration N and P-Channel
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 500mW
• Drain to Source Voltage (Vdss) 60V, 50V
• Current - Continuous Drain (Id) @ 25°C 330mA, 170mA
• Input Capacitance (Ciss) (Max) @ Vds 36pF @ 25V
• Rds On (Max) @ Id, Vgs 7.5Ohm @ 100mA, 10V
• Gate Charge (Qg) (Max) @ Vgs 0.35nC @ 5V
• FET Feature Logic Level Gate
• Vgs(th) (Max) @ Id 2.1V @ 250µA
• Supplier Device Package SOT-666
• Grade Automotive
• Qualification AEC-Q101
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant