技术参数

• Package / Case 8-SOIC (0.154", 3.90mm Width)
• Mounting Type Surface Mount
• Configuration N and P-Channel
• Operating Temperature 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 450mW
• Drain to Source Voltage (Vdss) 40V
• Current - Continuous Drain (Id) @ 25°C 6.1A, 5.3A
• Input Capacitance (Ciss) (Max) @ Vds 850pF @ 10V
• Rds On (Max) @ Id, Vgs 32mOhm @ 3.1A, 10V
• Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
• FET Feature Logic Level Gate
• Vgs(th) (Max) @ Id 2.3V @ 100µA
• Supplier Device Package 8-SOP
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status RoHS Compliant