技术参数

• Package / Case 3-SIP
• Mounting Type Through Hole
• Transistor Type PNP
• Operating Temperature 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 600mV @ 30mA, 300mA
• Current - Collector Cutoff (Max) 1µA
• DC Current Gain (hFE) (Min) @ Ic, Vce 85 @ 10mA, 10V
• Frequency - Transition 200MHz
• Supplier Device Package MT-1-A1
• Current - Collector (Ic) (Max) 500 mA
• Voltage - Collector Emitter Breakdown (Max) 50 V
• Power - Max 600 mW
• ECCN EAR99
• HTSUS 8541.21.0075
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• RoHS Status RoHS non-compliant