技术参数

• Package / Case 6-VDFN Exposed Pad
• Mounting Type Surface Mount
• Configuration 2 N-Channel (Dual)
• Technology MOSFET (Metal Oxide)
• Power - Max 1.5W
• Drain to Source Voltage (Vdss) 30V
• Current - Continuous Drain (Id) @ 25°C 3.6A
• Input Capacitance (Ciss) (Max) @ Vds 270pF @ 25V
• Rds On (Max) @ Id, Vgs 63mOhm @ 3.4A, 4.5V
• Gate Charge (Qg) (Max) @ Vgs 2.8nC @ 4.5V
• FET Feature Logic Level Gate
• Vgs(th) (Max) @ Id 1.1V @ 10µA
• Supplier Device Package 6-PQFN (2x2)
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected