技术参数

• Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
• Mounting Type Through Hole
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 170mA (Ta)
• Rds On (Max) @ Id, Vgs 10Ohm @ 170mA, 10V
• Vgs(th) (Max) @ Id 2V @ 1mA
• Supplier Device Package TO-92-3
• Drain to Source Voltage (Vdss) 50 V
• Input Capacitance (Ciss) (Max) @ Vds 40 pF @ 25 V
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status RoHS non-compliant