技术参数

• Package / Case 8-SOIC (0.154", 3.90mm Width)
• Mounting Type Surface Mount
• Configuration 2 P-Channel (Dual)
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 900mW
• Drain to Source Voltage (Vdss) 30V
• Current - Continuous Drain (Id) @ 25°C 2.9A
• Input Capacitance (Ciss) (Max) @ Vds 350pF @ 10V
• Rds On (Max) @ Id, Vgs 130mOhm @ 1A, 10V
• Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
• FET Feature Logic Level Gate
• Vgs(th) (Max) @ Id 2.8V @ 250µA
• Supplier Device Package 8-SOIC
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected