技术参数

• Package / Case TO-261-4, TO-261AA
• Mounting Type Surface Mount
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 3A (Ta)
• Rds On (Max) @ Id, Vgs 180mOhm @ 3A, 10V
• Vgs(th) (Max) @ Id 3V @ 250µA
• Supplier Device Package SOT-223-4
• Drain to Source Voltage (Vdss) 30 V
• Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 525 pF @ 10 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status RoHS non-compliant