技术参数

• Package / Case i4-Pac™-5
• Mounting Type Through Hole
• Configuration 2 N-Channel (Dual)
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 125W
• Drain to Source Voltage (Vdss) 200V
• Current - Continuous Drain (Id) @ 25°C 33A
• Input Capacitance (Ciss) (Max) @ Vds 3700pF @ 25V
• Rds On (Max) @ Id, Vgs 40mOhm @ 30A, 10V
• Gate Charge (Qg) (Max) @ Vgs 90nC @ 10V
• Vgs(th) (Max) @ Id 4.5V @ 250µA
• Supplier Device Package ISOPLUS i4-PAC™
• California Prop 65 California Prop 65 Information
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant