- 产品型号 US6M11TR
- 品牌 ROHM Semiconductor
- RoHS Yes
- 描述 MOSFET N/P-CH 20V/12V TUMT6
- 分类 FET、MOSFET 阵列
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PDF
- 库存 15103
技术参数
- Package / Case 6-SMD, Flat Leads
- Mounting Type Surface Mount
- Configuration N and P-Channel
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- Power - Max 1W
- Drain to Source Voltage (Vdss) 20V, 12V
- Current - Continuous Drain (Id) @ 25°C 1.5A, 1.3A
- Input Capacitance (Ciss) (Max) @ Vds 110pF @ 10V
- Rds On (Max) @ Id, Vgs 180mOhm @ 1.5A, 4.5V
- Gate Charge (Qg) (Max) @ Vgs 1.8nC @ 4.5V
- FET Feature Logic Level Gate
- Vgs(th) (Max) @ Id 1V @ 1mA
- Supplier Device Package TUMT6
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant


