技术参数

• Package / Case SOT-563, SOT-666
• Mounting Type Surface Mount
• Configuration N and P-Channel
• Operating Temperature 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 150mW
• Drain to Source Voltage (Vdss) 20V
• Current - Continuous Drain (Id) @ 25°C 200mA
• Input Capacitance (Ciss) (Max) @ Vds 25pF @ 10V
• Rds On (Max) @ Id, Vgs 1Ohm @ 200mA, 4V
• FET Feature Logic Level Gate
• Vgs(th) (Max) @ Id 1V @ 1mA
• Supplier Device Package EMT6
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant