技术参数

• Package / Case TO-247-4
• Mounting Type Through Hole
• Operating Temperature -55°C ~ 175°C (TJ)
• Technology SiC (Silicon Carbide Junction Transistor)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 65A (Tj)
• Rds On (Max) @ Id, Vgs 60mOhm @ 40A, 15V
• Power Dissipation (Max) 306W (Tj)
• Vgs(th) (Max) @ Id 2.9V @ 4mA
• Supplier Device Package TO-247
• Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
• Vgs (Max) +22V, -10V
• Drain to Source Voltage (Vdss) 1200 V
• Gate Charge (Qg) (Max) @ Vgs 95 nC @ 15 V
• Input Capacitance (Ciss) (Max) @ Vds 2600 pF @ 800 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) Not Applicable
• REACH Status REACH Affected
• RoHS Status ROHS3 Compliant