技术参数

• Package / Case 8-SOIC (0.154", 3.90mm Width)
• Mounting Type Surface Mount
• Configuration 2 N-Channel
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 1.3W (Ta)
• Drain to Source Voltage (Vdss) 60V
• Current - Continuous Drain (Id) @ 25°C 5A (Ta)
• Input Capacitance (Ciss) (Max) @ Vds 1295pF @ 25V
• Rds On (Max) @ Id, Vgs 40mOhm @ 4.5A, 10V
• Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
• Vgs(th) (Max) @ Id 3V @ 250µA
• Supplier Device Package 8-SO
• ECCN EAR99
• HTSUS 8541.29.0095