技术参数

• Package / Case 8-PowerVDFN
• Mounting Type Surface Mount
• Configuration N and P-Channel
• Operating Temperature -55°C ~ 150°C
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 100V
• Current - Continuous Drain (Id) @ 25°C 25A (Tc), 12A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 50V, 1100pF @ 50V
• Rds On (Max) @ Id, Vgs 26mOhm @ 25A, 10V, 120mOhm @ 12A, 10V
• Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V, 20nC @ 10V
• Vgs(th) (Max) @ Id 2.5V @ 250µA
• Supplier Device Package DFN5060-8D
• HTSUS 8541.29.0095
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant