技术参数

• Package / Case Module
• Mounting Type Chassis Mount
• Configuration 4 N-Channel
• Operating Temperature -40°C ~ 175°C (TJ)
• Technology Silicon Carbide (SiC)
• Power - Max 371W (Tj)
• Drain to Source Voltage (Vdss) 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C 129A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 9129pF @ 800V
• Rds On (Max) @ Id, Vgs 11.5mOhm @ 100A, 18V
• Gate Charge (Qg) (Max) @ Vgs 454nC @ 20V
• Vgs(th) (Max) @ Id 4.4V @ 60mA
• Supplier Device Package 29-PIM (56.7x42.5)
• Moisture Sensitivity Level (MSL) Not Applicable
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant