技术参数

• Package / Case 10-SMD, No Lead
• Mounting Type Surface Mount
• Configuration 2 N-Channel, Common Drain
• Operating Temperature 150°C
• Technology MOSFET (Metal Oxide)
• Power - Max 540mW (Ta)
• Drain to Source Voltage (Vdss) 12V
• Current - Continuous Drain (Id) @ 25°C 16A (Ta)
• Input Capacitance (Ciss) (Max) @ Vds 5250pF @ 10V
• Rds On (Max) @ Id, Vgs 2mOhm @ 8A, 4.5V
• Gate Charge (Qg) (Max) @ Vgs 38nC @ 4V
• Vgs(th) (Max) @ Id 1.4V @ 1.64mA
• Supplier Device Package 10-SMD
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)