技术参数

• Package / Case SOT-563, SOT-666
• Mounting Type Surface Mount
• Configuration N and P-Channel Complementary
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 500mW (Ta)
• Drain to Source Voltage (Vdss) 60V
• Current - Continuous Drain (Id) @ 25°C 480mA (Ta), 320mA (Ta)
• Input Capacitance (Ciss) (Max) @ Vds 41pF @ 30V, 40pF @ 25V
• Rds On (Max) @ Id, Vgs 1.7Ohm @ 200mA, 10V, 4Ohm @ 200mA, 10V
• Gate Charge (Qg) (Max) @ Vgs 1.04nC @ 10V, 1.1nC @ 10V
• Vgs(th) (Max) @ Id 2.5V @ 250µA, 3V @ 250µA
• Supplier Device Package SOT-563
• Grade Automotive
• Qualification AEC-Q101
• ECCN EAR99
• HTSUS 8541.21.0095
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant