技术参数

• Package / Case 8-SMD, Flat Lead
• Mounting Type Surface Mount
• Configuration N and P-Channel
• Operating Temperature -55°C ~ 150°C
• Technology MOSFET (Metal Oxide)
• Power - Max 1.1W (Ta)
• Drain to Source Voltage (Vdss) 100V
• Current - Continuous Drain (Id) @ 25°C 2A (Ta), 1.5A (Ta)
• Input Capacitance (Ciss) (Max) @ Vds 290pF @ 25V, 950pF @ 25V
• Rds On (Max) @ Id, Vgs 325mOhm @ 2A, 10V, 470mOhm @ 1.5A, 10V
• Gate Charge (Qg) (Max) @ Vgs 4.7nC @ 5V, 17nC @ 5V
• Vgs(th) (Max) @ Id 2.5V @ 1mA
• Supplier Device Package TSMT8
• Grade Automotive
• Qualification AEC-Q101
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)