技术参数

• Package / Case 8-PowerTDFN
• Mounting Type Surface Mount
• Configuration 2 N-Channel
• Operating Temperature 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 3W (Ta), 21W (Tc)
• Drain to Source Voltage (Vdss) 100V
• Current - Continuous Drain (Id) @ 25°C 6A (Ta), 17A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 305pF @ 50V
• Rds On (Max) @ Id, Vgs 54mOhm @ 6A, 10V
• Gate Charge (Qg) (Max) @ Vgs 6.7nC @ 10V
• Vgs(th) (Max) @ Id 2.5V @ 1mA
• Supplier Device Package 8-HSOP
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)