技术参数

• Package / Case Module
• Mounting Type Chassis Mount
• Configuration 4 N-Channel
• Operating Temperature 175°C (TJ)
• Technology Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss) 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C 50A
• Input Capacitance (Ciss) (Max) @ Vds 3500pF @ 800V
• Rds On (Max) @ Id, Vgs 34mOhm @ 50A, 18V
• Gate Charge (Qg) (Max) @ Vgs 147nC @ 18V
• Vgs(th) (Max) @ Id 4.9V @ 5mA
• Supplier Device Package ACEPACK 1
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 3 (168 Hours)
• RoHS Status ROHS3 Compliant