技术参数

• Package / Case 8-PowerTDFN
• Mounting Type Surface Mount
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 15A (Ta), 35A (Tc)
• Rds On (Max) @ Id, Vgs 8.7mOhm @ 14A, 10V
• Vgs(th) (Max) @ Id 2.35V @ 25µA
• Supplier Device Package 8-PQFN (5x6)
• Drain to Source Voltage (Vdss) 30 V
• Gate Charge (Qg) (Max) @ Vgs 12 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds 1160 pF @ 15 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected