技术参数

• Package / Case TO-206AF, TO-72-4 Metal Can
• Mounting Type Through Hole
• Transistor Type NPN
• Operating Temperature 200°C (TJ)
• Gain 6.5dB ~ 10.5dB
• Power - Max 200mW
• Current - Collector (Ic) (Max) 30mA
• Voltage - Collector Emitter Breakdown (Max) 15V
• DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 5V
• Frequency - Transition 4GHz
• Noise Figure (dB Typ @ f) 1.5dB @ 450MHz
• Supplier Device Package TO-72
• ECCN EAR99
• HTSUS 8541.29.0075
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected