技术参数

• Package / Case 8-SOIC (0.173", 4.40mm Width)
• Mounting Type Surface Mount
• Operating Temperature 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 10A (Ta)
• Rds On (Max) @ Id, Vgs 10mOhm @ 5A, 4.5V
• Power Dissipation (Max) 1W (Ta)
• Vgs(th) (Max) @ Id 1.2V @ 200µA
• Supplier Device Package 8-SOP (5.5x6.0)
• Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
• Vgs (Max) ±8V
• Drain to Source Voltage (Vdss) 20 V
• Gate Charge (Qg) (Max) @ Vgs 115 nC @ 5 V
• Input Capacitance (Ciss) (Max) @ Vds 9130 pF @ 10 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)