- 产品型号 GT105N10T
- 品牌 Goford Semiconductor
- RoHS No
- 描述 MOSFET N-CH 100V 55A TO-220
- 分类 单 FET、MOSFET
-
PDF
- 库存 11500
技术参数
- Package / Case TO-220-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 55A (Tc)
- Rds On (Max) @ Id, Vgs 10.5mOhm @ 35A, 10V
- Power Dissipation (Max) 74W (Tc)
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Supplier Device Package TO-220
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 3 (168 Hours)
- REACH Status Vendor Undefined
- RoHS Status RoHS non-compliant


