技术参数

• Package / Case TO-247-4
• Mounting Type Through Hole
• Operating Temperature 175°C (TJ)
• Technology SiC (Silicon Carbide Junction Transistor)
• Power Dissipation (Max) 115W
• Supplier Device Package TO-247-4L
• Drain to Source Voltage (Vdss) 1200 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) Not Applicable
• REACH Status REACH Affected
• RoHS Status ROHS3 Compliant