技术参数

• Package / Case SP1
• Mounting Type Chassis Mount
• Configuration 4 N-Channel (Full Bridge)
• Operating Temperature -40°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 208W
• Drain to Source Voltage (Vdss) 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C 8A
• Input Capacitance (Ciss) (Max) @ Vds 3812pF @ 25V
• Rds On (Max) @ Id, Vgs 1.68Ohm @ 7A, 10V
• Gate Charge (Qg) (Max) @ Vgs 145nC @ 10V
• Vgs(th) (Max) @ Id 5V @ 1mA
• Supplier Device Package SP1
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant