技术参数

• Package / Case SP1
• Mounting Type Chassis Mount
• Operating Temperature -40°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 31A (Tc)
• Rds On (Max) @ Id, Vgs 360mOhm @ 25A, 10V
• Power Dissipation (Max) 657W (Tc)
• Vgs(th) (Max) @ Id 5V @ 2.5mA
• Supplier Device Package SP1
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Vgs (Max) ±30V
• Drain to Source Voltage (Vdss) 1200 V
• Gate Charge (Qg) (Max) @ Vgs 560 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 14560 pF @ 25 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant