技术参数

• Package / Case SP1
• Mounting Type Chassis Mount
• Configuration 2 N-Channel (Half Bridge)
• Operating Temperature -40°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 357W
• Drain to Source Voltage (Vdss) 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C 14A
• Input Capacitance (Ciss) (Max) @ Vds 6696pF @ 25V
• Rds On (Max) @ Id, Vgs 960mOhm @ 12A, 10V
• Gate Charge (Qg) (Max) @ Vgs 260nC @ 10V
• Vgs(th) (Max) @ Id 5V @ 2.5mA
• Supplier Device Package SP1
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected