技术参数

• Package / Case SP3
• Mounting Type Chassis Mount
• Configuration 2 N-Channel (Half Bridge)
• Operating Temperature -40°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 1250W
• Drain to Source Voltage (Vdss) 1000V (1kV)
• Current - Continuous Drain (Id) @ 25°C 68A
• Input Capacitance (Ciss) (Max) @ Vds 17400pF @ 25V
• Rds On (Max) @ Id, Vgs 120mOhm @ 34A, 10V
• Gate Charge (Qg) (Max) @ Vgs 616nC @ 10V
• Vgs(th) (Max) @ Id 5V @ 10mA
• Supplier Device Package SP3
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• RoHS Status RoHS Compliant