技术参数

• Package / Case SP1
• Mounting Type Chassis Mount
• Configuration 2 N-Channel (Half Bridge)
• Operating Temperature -40°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 250W
• Drain to Source Voltage (Vdss) 600V
• Current - Continuous Drain (Id) @ 25°C 49A
• Input Capacitance (Ciss) (Max) @ Vds 7200pF @ 25V
• Rds On (Max) @ Id, Vgs 45mOhm @ 24.5A, 10V
• Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
• Vgs(th) (Max) @ Id 3.9V @ 3mA
• Supplier Device Package SP1
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant