技术参数
- Package / Case Module
- Mounting Type Chassis Mount
- Configuration 4 N-Channel (Full Bridge)
- Operating Temperature -40°C ~ 150°C (TJ)
- Technology Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss) 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C 50A (Tj)
- Input Capacitance (Ciss) (Max) @ Vds 5400pF @ 1000V
- Rds On (Max) @ Id, Vgs 28.9mOhm @ 30A, 15V
- Gate Charge (Qg) (Max) @ Vgs 162nC @ 15V
- Vgs(th) (Max) @ Id 3.9V @ 17mA
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) Not Applicable
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