技术参数

• Package / Case Module
• Mounting Type Chassis Mount
• Configuration 4 N-Channel (Full Bridge)
• Operating Temperature -40°C ~ 150°C (TJ)
• Technology Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss) 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C 50A (Tj)
• Input Capacitance (Ciss) (Max) @ Vds 5400pF @ 1000V
• Rds On (Max) @ Id, Vgs 28.9mOhm @ 30A, 15V
• Gate Charge (Qg) (Max) @ Vgs 162nC @ 15V
• Vgs(th) (Max) @ Id 3.9V @ 17mA
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) Not Applicable