技术参数

• Package / Case Module
• Mounting Type Chassis Mount
• Configuration 2 N-Channel
• Operating Temperature 175°C (TJ)
• Technology Silicon Carbide (SiC)
• Power - Max 1.45kW (Tc)
• Drain to Source Voltage (Vdss) 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C 447A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 44000pF @ 10V
• Vgs(th) (Max) @ Id 4.8V @ 218.4mA
• Supplier Device Package Module
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)