技术参数

• Package / Case SOT-23-6 Thin, TSOT-23-6
• Mounting Type Surface Mount
• Operating Temperature 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 5A (Ta)
• Rds On (Max) @ Id, Vgs 59mOhm @ 2.5A, 10V
• Power Dissipation (Max) 700mW (Ta)
• Vgs(th) (Max) @ Id 1.2V @ 200µA
• Supplier Device Package VS-6 (2.9x2.8)
• Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 30 V
• Gate Charge (Qg) (Max) @ Vgs 12.3 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 490 pF @ 10 V
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)