技术参数

• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 4.2A (Ta)
• Drain to Source Voltage (Vdss) 20 V
• Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 917 pF @ 10 V
• ECCN EAR99
• RoHS Status RoHS Compliant