技术参数

• Package / Case SOT-563, SOT-666
• Mounting Type Surface Mount
• Configuration 2 P-Channel
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 312mW (Tc)
• Drain to Source Voltage (Vdss) 20V
• Current - Continuous Drain (Id) @ 25°C 400mA (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 78pF @ 10V
• Rds On (Max) @ Id, Vgs 600mOhm @ 300mA, 4.5V
• Gate Charge (Qg) (Max) @ Vgs 2nC @ 4.5V
• Vgs(th) (Max) @ Id 1V @ 250µA
• Supplier Device Package SOT-563
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant