技术参数

• Package / Case 8-PowerVDFN
• Mounting Type Surface Mount
• Configuration 2 P-Channel
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 25W (Tc)
• Drain to Source Voltage (Vdss) 20V
• Current - Continuous Drain (Id) @ 25°C 7.5A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 2100pF @ 15V
• Rds On (Max) @ Id, Vgs 33mOhm @ 4A, 4.5V
• Gate Charge (Qg) (Max) @ Vgs 25nC @ 4.5V
• Vgs(th) (Max) @ Id 1V @ 250µA
• Supplier Device Package 8-PPAK (3.15x3.1)
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant