技术参数

• Package / Case 8-DIP (0.300", 7.62mm)
• Mounting Type Through Hole
• Configuration N and P-Channel
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 2.5W
• Drain to Source Voltage (Vdss) 60V
• Input Capacitance (Ciss) (Max) @ Vds 570pF @ 30V
• Rds On (Max) @ Id, Vgs 60mOhm @ 4.7A, 10V
• Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V
• FET Feature Logic Level Gate
• Vgs(th) (Max) @ Id 3V @ 250µA
• Supplier Device Package 8-PDIP
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected