技术参数

• Package / Case TO-252-5, DPAK (4 Leads + Tab), TO-252AD
• Mounting Type Surface Mount
• Configuration N and P-Channel, Common Drain
• Operating Temperature -55°C ~ 175°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 1.6W, 1.7W
• Drain to Source Voltage (Vdss) 40V
• Current - Continuous Drain (Id) @ 25°C 8A
• Input Capacitance (Ciss) (Max) @ Vds 404pF @ 20V
• Rds On (Max) @ Id, Vgs 33mOhm @ 8A, 10V
• Gate Charge (Qg) (Max) @ Vgs 9.2nC @ 10V
• FET Feature Logic Level Gate
• Vgs(th) (Max) @ Id 3V @ 250µA
• Supplier Device Package TO-252-4L
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected