技术参数

• Package / Case 8-VDFN Exposed Pad
• Mounting Type Surface Mount
• Configuration 2 N-Channel (Dual) Asymmetrical
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 4.1W (Ta), 24W (Tc), 4.4W (Ta), 73W (Tc)
• Drain to Source Voltage (Vdss) 30V
• Current - Continuous Drain (Id) @ 25°C 27A (Ta), 66A (Tc), 57A (Ta), 233A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 1220pF @ 15V, 6260pF @ 15V
• Rds On (Max) @ Id, Vgs 3.5mOhm @ 20A, 10V, 800µOhm @ 20A, 10V
• Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V, 123nC @ 10V
• Vgs(th) (Max) @ Id 2.1V @ 250µA, 1.9V @ 250µA
• Supplier Device Package 8-DFN (5x6)
• ECCN EAR99
• HTSUS 8541.29.0095
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant