技术参数

• Package / Case TO-236-3, SC-59, SOT-23-3
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 170mA
• Rds On (Max) @ Id, Vgs 8Ohm @ 100mA, 10V
• Power Dissipation (Max) 225mW
• Vgs(th) (Max) @ Id 2V @ 250µA
• Supplier Device Package SOT-23
• Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
• Vgs (Max) ±30V
• Drain to Source Voltage (Vdss) 60 V
• Input Capacitance (Ciss) (Max) @ Vds 30 pF @ 25 V
• ECCN EAR99
• HTSUS 8541.21.0095
• REACH Status REACH Unaffected