技术参数

• Package / Case 8-SOIC (0.154", 3.90mm Width)
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 2W (Tc), 3.1W (Tc)
• Drain to Source Voltage (Vdss) 100V
• Current - Continuous Drain (Id) @ 25°C 3A (Tc), 3.5A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 668pF @ 50V, 1732pF @ 50V
• Rds On (Max) @ Id, Vgs 130mOhm @ 5A, 10V, 200mOhm @ 3A, 10V
• Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V, 23nC @ 10V
• Vgs(th) (Max) @ Id 2.5V @ 250µA
• Supplier Device Package 8-SOP
• ECCN EAR99
• HTSUS 8541.29.0000
• REACH Status REACH Unaffected
• RoHS Status RoHS Compliant