- 产品型号 DF8MR12W1M1HFB67BPSA1
- 品牌 IR (Infineon Technologies)
- RoHS Yes
- 描述 SIC 2N-CH 1200V 45A AG-EASY1B
- 分类 FET、MOSFET 阵列
- 库存 1524
技术参数
- Package / Case Module
- Mounting Type Chassis Mount
- Configuration 2 N-Channel
- Operating Temperature -40°C ~ 175°C (TJ)
- Technology Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss) 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C 45A
- Input Capacitance (Ciss) (Max) @ Vds 4400pF @ 800V
- Rds On (Max) @ Id, Vgs 16.2mOhm @ 50A, 18V
- Gate Charge (Qg) (Max) @ Vgs 149nC @ 18V
- Vgs(th) (Max) @ Id 5.15V @ 20mA
- Supplier Device Package AG-EASY1B
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant


