技术参数

• Package / Case SOT-23-6
• Mounting Type Surface Mount
• Configuration N and P-Channel
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 1.25W
• Drain to Source Voltage (Vdss) 20V
• Current - Continuous Drain (Id) @ 25°C 1.3A, 1.1A
• Input Capacitance (Ciss) (Max) @ Vds 60pF @ 16V, 175pF @ 16V
• Rds On (Max) @ Id, Vgs 380mOhm @ 650mA, 4.5V, 520mOhm @ 1A, 4.5V
• FET Feature Logic Level Gate
• Vgs(th) (Max) @ Id 1.1V @ 250µA
• Supplier Device Package SOT-23-6L
• ECCN EAR99
• HTSUS 8541.29.0095