• 库存 113

技术参数

  • Package / Case TO-247-4
  • Mounting Type Through Hole
  • Technology SiCFET (Silicon Carbide)
  • FET Type N-Channel
  • Supplier Device Package TO-247-4
  • Drain to Source Voltage (Vdss) 1200 V
  • ECCN EAR99
  • HTSUS 8541.10.0080
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • REACH Status REACH Unaffected
  • RoHS Status ROHS3 Compliant

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MOSFET SILICON CARBIDE SIC 1200V

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