技术参数

• Package / Case 9-PowerSMD
• Mounting Type Surface Mount
• Configuration 2 N-Channel (Half Bridge)
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 208W (Tc)
• Drain to Source Voltage (Vdss) 650V
• Current - Continuous Drain (Id) @ 25°C 32A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 2211pF @ 100V
• Rds On (Max) @ Id, Vgs 97mOhm @ 23A, 10V
• Gate Charge (Qg) (Max) @ Vgs 47nC @ 10V
• Vgs(th) (Max) @ Id 4.75V @ 250µA
• Supplier Device Package 9-ACEPACK SMIT
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 3 (168 Hours)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant