• 库存 1965

技术参数

  • Package / Case 8-PowerSFN
  • Mounting Type Surface Mount
  • Technology SiCFET (Silicon Carbide)
  • Supplier Device Package PG-HSOF-8-1
  • Drive Voltage (Max Rds On, Min Rds On) 18V
  • Drain to Source Voltage (Vdss) 650 V
  • ECCN EAR99
  • HTSUS 8541.29.0095
  • Moisture Sensitivity Level (MSL) Not Applicable
  • REACH Status REACH Unaffected
  • RoHS Status ROHS3 Compliant

相关产品


SIC, MOSFET, 60M, 650V, TOLL, IN

库存: 2474

SILICON CARBIDE MOSFET PG-TO263-

库存: 822

SILICON CARBIDE MOSFET

库存: 1971

SILICON CARBIDE MOSFET

库存: 2000

SILICON CARBIDE MOSFET

库存: 2000

SILICON CARBIDE MOSFET

库存: 1804

SILICON CARBIDE MOSFET

库存: 2000

SILICON CARBIDE MOSFET

库存: 1965

SILICON CARBIDE MOSFET, PG-TO247

库存: 190

E SERIES POWER MOSFET POWERPAK 1

库存: 1967

Top