技术参数

• Package / Case TO-247-4
• Mounting Type Through Hole
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology SiCFET (Silicon Carbide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 65A (Tc)
• Rds On (Max) @ Id, Vgs 34mOhm @ 50A, 20V
• Power Dissipation (Max) 370W (Tc)
• Vgs(th) (Max) @ Id 4V @ 15mA
• Supplier Device Package TO-247-4
• Drive Voltage (Max Rds On, Min Rds On) 20V
• Vgs (Max) +25V, -10V
• Drain to Source Voltage (Vdss) 1200 V
• Gate Charge (Qg) (Max) @ Vgs 195 nC @ 20 V
• Input Capacitance (Ciss) (Max) @ Vds 4200 pF @ 1000 V
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• RoHS Status ROHS3 Compliant