技术参数

• Package / Case 8-SOIC (0.154", 3.90mm Width)
• Mounting Type Surface Mount
• Configuration N and P-Channel
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 2.5W (Tc), 1.9W (Tc)
• Drain to Source Voltage (Vdss) 60V
• Current - Continuous Drain (Id) @ 25°C 5A (Tc), 3.1A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 1336pF @ 30V, 1454pF @ 30V
• Rds On (Max) @ Id, Vgs 36mOhm @ 4.3A, 10V, 80mOhm @ 3.1A, 10V
• Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V, 37nC @ 10V
• Vgs(th) (Max) @ Id 2V @ 250µA, 2.2V @ 250µA
• Supplier Device Package 8-SOP
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 3 (168 Hours)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant